ZXM61P03FTA
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Краткое описание:
P-Channel JFET, 30V, 1.1A, SOT-23, Surface Mount
Дополнительная информация
P-channel silicon MOSFET, SOT-23 package, for small signal applications. Features 30V drain-source voltage (Vdss), 1.1A continuous drain current (ID), and a maximum drain-source on-resistance (Rds On) of 350mR. Operates with a nominal gate-source voltage (Vgs) of -1V and a maximum gate-source voltage of 20V. Includes fast switching times with a turn-on delay of 1.9ns and a fall time of 2.9ns. Surface mountable with a maximum power dissipation of 625mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 2.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Nominal Vgs | -1V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | -1.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 3000 |
| Input Capacitance | 140pF |
| Power Dissipation | 806mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.9ns |
| Dual Supply Voltage | -30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 350mR |
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