ZXM62N02E6TA
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Краткое описание:
N-Channel JFET, 20V, 3.2A ID, 100mR Rds(on), SOT-323
Дополнительная информация
N-Channel MOSFET, 20V Vds, 3.2A Continuous Drain Current. Features 100mΩ max Drain-to-Source On Resistance and 4ns typical Turn-On Delay Time. This surface mount device operates from -55°C to 150°C, with a 200mW max power dissipation. Packaged in SOT-323, it offers 50pF input capacitance and 8ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Series | ZXM62N02 |
| Weight | 0.000529oz |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 7.5R |
| Package/Case | SOT-323 |
| Current Rating | 3.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100mR |
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