ZXM62N03GTA
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Краткое описание:
N-Channel JFET, 30V, 4.7A ID, 150mR Rds(on), SOT-223
Дополнительная информация
N-Channel MOSFET, 30V Vdss, 4.7A continuous drain current, and 150mR drain-source on-resistance. This single-element silicon FET features a SOT-223 surface-mount package, ideal for compact designs. With fast switching speeds including a 2.9ns turn-on delay and 6.4ns fall time, it offers efficient performance. Operating from -55°C to 150°C, this RoHS and REACH compliant component is designed for reliability.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 6.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 110mR |
| Package/Case | SOT-223 |
| Current Rating | 4.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 380pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11.7ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 150mR |
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