ZXM62P03E6TA
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Краткое описание:
P-Channel JFET, 30V, 1.5A ID, 150mR Rds(on), SOT-23-6
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET for surface mount applications. Features a continuous drain current of 1.5A and a drain-source voltage of 30V. Offers a maximum drain-source on-resistance of 150mR. Operating temperature range from -55°C to 150°C. Packaged in a SOT-23-6 for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | P-CHANNEL |
| Fall Time | 6.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | SOT-23-6 |
| Current Rating | -1.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 3000 |
| Input Capacitance | 330pF |
| Power Dissipation | 806mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.9ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 150mR |
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