ZXM64N035L3
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Краткое описание:
N-Channel MOSFET, 35V, 13A, 60mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, 35V Drain-Source Voltage, 13A Continuous Drain Current, and 60mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220-3 through-hole package, 1.5W max power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8ns fall time, 4.2ns turn-on delay, and 20.5ns turn-off delay, with 950pF input capacitance. This RoHS compliant component is lead-free and suitable for various power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 10.66mm |
| Height | 4.82mm |
| Length | 16.51mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 60mR |
| Package/Case | TO-220-3 |
| Current Rating | 13A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 35V |
| Package Quantity | 1000 |
| Input Capacitance | 950pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 70mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 35V |
| Drain-source On Resistance-Max | 60mR |
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