ZXM66P02N8TA
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Краткое описание:
P-Channel JFET, 20V, 8A ID, 25mR Rds On, SOIC
Дополнительная информация
P-channel MOSFET, surface mount, SOIC-8 package. Features 20V drain-source voltage (Vdss), 8A continuous drain current (ID), and a maximum drain-source on-resistance (Rds On) of 25mR. Operates with a gate-source voltage (Vgs) up to 12V and offers a maximum power dissipation of 2.5W. This silicon transistor exhibits a turn-on delay time of 14ns and a fall time of 98.4ns, with an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| Polarity | P-CHANNEL |
| Fall Time | 98.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | -7.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 2.068nF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 118.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25mR |
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