ZXM66P03N8TA
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Краткое описание:
P-Channel JFET, 30V, 7.9A ID, 25mR Rds(on), SOIC-8
Дополнительная информация
P-channel silicon MOSFET, surface mount SOIC-8 package, featuring 30V drain-source voltage and 7.9A continuous drain current. Offers low 25mR drain-source on-resistance and 1.979nF input capacitance. Operates across a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| Polarity | P-CHANNEL |
| Fall Time | 39.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | -7.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Input Capacitance | 1.979nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
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