ZXMC10A816N8TC
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Краткое описание:
N/P-Channel MOSFET, 100V, 2A, 230mR, SOIC-8
Дополнительная информация
Dual N-Channel and P-Channel MOSFET, surface mountable in an SOIC-8 package. Features 100V drain-source voltage, 2A continuous drain current, and a low 0.23 ohm drain-source resistance. Operates with a 20V gate-source voltage and offers fast switching speeds with a 4.3ns turn-on delay and 12ns fall time. This silicon Metal-oxide Semiconductor FET is RoHS and REACH SVHC compliant, with a maximum power dissipation of 1.8W and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 230mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 497pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 4.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 235mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 100V |
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