ZXMC3A16DN8TA
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Краткое описание:
N/P-Ch JFET, 30V, 6.4A ID, 35mR Rds On, SOIC-8
Дополнительная информация
Surface mount N-channel and P-channel dual-element silicon Metal-oxide Semiconductor FET with a 30V drain-source voltage and 6.4A continuous drain current. Features low 35mR drain-source on-resistance, 3ns turn-on delay, and 9.4ns fall time. Operates from -55°C to 150°C with 2.1W power dissipation. Packaged in SOIC-8 for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SOIC |
| Current Rating | 6.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 796pF |
| Power Dissipation | 2.1W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 48mR |
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