ZXMD63P02XTA
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Краткое описание:
P-Channel MOSFET, 20V, 1.7A, 270mR, MSOP-8
Дополнительная информация
P-channel MOSFET, 2-element, silicon, metal-oxide semiconductor FET designed for surface mount applications. Features a continuous drain current of 1.7A, drain-source voltage of 20V, and a maximum drain-source on resistance of 270mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.25W. Packaged in MSOP for efficient integration.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | P-CHANNEL |
| Fall Time | 9.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 270mR |
| Package/Case | MSOP |
| Current Rating | -1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1000 |
| Input Capacitance | 290pF |
| Power Dissipation | 1.25W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.04W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 270mR |
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