ZXMD63P03XTA
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Краткое описание:
P-Channel JFET, 30V, 2A, 270mR, MSOP-8
Дополнительная информация
P-Channel MOSFET, 2-element, silicon, metal-oxide semiconductor FET for surface mount applications. Features 30V drain-to-source voltage (Vdss), 2A continuous drain current (ID), and a maximum power dissipation of 1.04W. Offers low on-resistance with Rds On Max at 185mR. Operates across a wide temperature range from -55°C to 150°C. Packaged in MSOP for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | P-CHANNEL |
| Fall Time | 4.8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 185mR |
| Package/Case | MSOP |
| Current Rating | -1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1000 |
| Input Capacitance | 270pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.04W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
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