ZXMHN6A07T8TA
Снят с производства
Краткое описание:
4-Ch N-Ch JFET, 60V, 1.6A, 300mR, SM8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a 4-element junction field-effect transistor designed for small signal applications. Features include a 60V Drain to Source Breakdown Voltage (Vdss), 1.6A Continuous Drain Current (ID), and 300mR Drain to Source Resistance (Rds On Max). This surface mount device offers fast switching with a 1.4ns fall time and 1.8ns turn-on delay time. Operates within a temperature range of -55°C to 150°C and comes in an 8-pin SM8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| FET Type | 4 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 1.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 166pF |
| Number of Channels | 4 |
| Turn-On Delay Time | 1.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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