ZXMN0545G4TA

ZXMN0545G4TA - Diodes
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Краткое описание: 450V N-Channel JFET, 140mA ID, 50R Rds(on), TO-261-4

Дополнительная информация

N-Channel Silicon FET, TO-261-4 package, offering a 450V Drain-Source Voltage (Vdss) and 140mA Continuous Drain Current (ID). Features a 50 Ohm maximum Drain-Source On Resistance (Rds On Max) and a 2W maximum power dissipation. Operates across a temperature range of -55°C to 150°C with fast switching speeds, including a 7ns turn-on delay and 16ns turn-off delay. This surface-mount device is lead-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.65mm
Length 6.7mm
Weight 0.000282oz
FET Type 1 N-Channel
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 50R
Package/Case TO-261-4
Current Rating 140mA
RoHS Compliant Yes
DC Rated Voltage 450V
Package Quantity 1000
Input Capacitance 70pF
Number of Channels 1
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 16ns
Reach SVHC Compliant Yes
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 50R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 140mA
Drain to Source Voltage (Vdss) 450V
Drain-source On Resistance-Max 50R

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