ZXMN10A07FTA
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N-Channel JFET, 100V, 800mA, SOT-23
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23 package. Features 100V Drain to Source Voltage (Vdss) and 800mA Continuous Drain Current (ID). Offers low Drain-source On Resistance (Rds On) of 700mR maximum. Includes fast switching speeds with a 1.5ns fall time and 1.8ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 1.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SOT-23-3 |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 3000 |
| Input Capacitance | 138pF |
| Power Dissipation | 806mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 700mR |
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