ZXMN10A07ZTA
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Краткое описание:
N-Channel JFET, 100V, 1.4A ID, 700mR Rds(on), SOT-89
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features 100V drain-source breakdown voltage and 1.4A continuous drain current. On-resistance is 700mΩ maximum. Packaged in SOT-89 for surface mounting, with a 3-pin configuration. Operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.004603oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SOT-89-3 |
| Current Rating | 700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Input Capacitance | 138pF |
| Power Dissipation | 2.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 700mR |
| Drain to Source Breakdown Voltage | 100V |
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