ZXMN10A08E6TA
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Краткое описание:
N-Channel JFET, 100V, 3.5A ID, 250mR Rds On, SOT-23-6
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET for surface mount applications. Features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 3.5A. Offers a low Drain-to-Source On Resistance (Rds On) of 250mR. This single-element transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.7W. Packaged in a SOT-23-6 surface-mount case, it is RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Package/Case | SOT-23-6 |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 3000 |
| Input Capacitance | 405pF |
| Power Dissipation | 1.7W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 3.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
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