ZXMN10A08E6TC
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Краткое описание:
N-Channel JFET, 100V, 1.5A, 250mR Rds(on), SOT-23-6
Дополнительная информация
N-channel silicon MOSFET for surface mount applications, featuring a 100V drain-source voltage (Vdss) and a continuous drain current (ID) of 1.5A. This single-element field-effect transistor offers a low drain-source on-resistance (Rds On) of 250mΩ, with fast switching speeds including a 2.2ns fall time and 3.4ns turn-on delay. Packaged in a compact SOT-23-6, it operates within a temperature range of -55°C to 150°C and supports a gate-to-source voltage (Vgs) up to 20V. The component is RoHS and REACH SVHC compliant, designed for efficient power management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Package/Case | SOT-23-6 |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 10000 |
| Input Capacitance | 405pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
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