ZXMN10A11GTA
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Краткое описание:
N-Channel JFET, 100V, 2.4A ID, 350mR Rds(on), SOT-223
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for surface mount applications. Features a 100V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 2.4A. Offers a low Drain-Source On-Resistance (Rds On) of 350mR maximum. Includes fast switching times with a turn-on delay of 2.7ns and a fall time of 3.5ns. Packaged in a SOT-223 case, this RoHS and REACH SVHC compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Package/Case | SOT-223 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Input Capacitance | 274pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.4ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 350mR |
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