ZXMN10A25GTA
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N-Channel MOSFET, 100V, 4A, 125mR Rds On, SOT-223
Дополнительная информация
N-channel MOSFET featuring 100V drain-source voltage and 4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 125mΩ drain-source on-resistance. Designed for surface mounting in a SOT-223 package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3.9W. Key switching characteristics include a 4.9ns turn-on delay and 9.4ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 859pF |
| Power Dissipation | 3.9W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 125mR |
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