ZXMN2A01FTA
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Краткое описание:
N-Channel JFET, 20V, 2.2A, 120mR, SOT-23
Дополнительная информация
N-Channel Silicon MOSFET, SOT-23 package, featuring a 20V Drain-Source Voltage (Vdss) and a maximum continuous drain current (ID) of 2.2A. This surface-mount transistor offers a low Drain-Source On-Resistance (Rds On) of 120mR, with a threshold voltage of 700mV. It operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with a turn-on delay of 2.49ns and fall time of 5.21ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.21ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOT-23 |
| Current Rating | 2.09A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Input Capacitance | 303pF |
| Power Dissipation | 806mW |
| Threshold Voltage | 700mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.49ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.47ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 225mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 120mR |
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