ZXMN2A02X8TA
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Краткое описание:
N-Channel JFET, 20V, 7.8A ID, 20mR Rds(on), MSOP-8
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET, MSOP-8 package, offering a 20V Drain to Source Breakdown Voltage and 20V Gate to Source Voltage. Features a maximum Drain-source On Resistance of 20mR and a continuous drain current of 7.8A. This surface mount transistor operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.67W. Compliant with RoHS and REACH SVHC standards, it is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | N-CHANNEL |
| Fall Time | 13.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | MSOP |
| Current Rating | 5.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1000 |
| Input Capacitance | 1.9nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.67W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 20mR |
| Drain to Source Breakdown Voltage | 20V |
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