ZXMN2A04DN8TA
Производится
Увеличить
Краткое описание:
N-Channel JFET, 20V, 7.7A ID, 25mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element JFET with a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 7.7A. Features include a low Drain-Source On Resistance (Rds On) of 25mR, a Gate-to-Source Voltage (Vgs) of 12V, and fast switching times with a turn-on delay of 7.9ns and fall time of 30.6ns. This surface mount device, packaged in SOIC, offers a maximum power dissipation of 2.1W and operates within a temperature range of -55°C to 150°C. It is RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 30.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Input Capacitance | 1.88nF |
| Power Dissipation | 2.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
