ZXMN2A04DN8TC
Производится
Увеличить
Краткое описание:
2-Channel N-Channel JFET, 5.9A ID, 20V Vdss, 25mR Rds On, SO-8
Дополнительная информация
The Diodes ZXMN2A04DN8TC is a 2-channel N-channel junction field-effect transistor with a maximum continuous drain current of 5.9A and a drain to source voltage of 20V. It features a maximum drain to source resistance of 25mR and an input capacitance of 1.88nF. This transistor is packaged in a surface-mount SO-8 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 14.8ns |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.88nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 7.9ns |
| Turn-Off Delay Time | 50.5ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
