ZXMN2A14FTA
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Краткое описание:
N-Channel JFET, 20V, 4.1A ID, 60mR Rds(on), SOT-23
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23-3 package, offering a 20V Drain to Source Breakdown Voltage and 4.1A Continuous Drain Current. Features a low Drain-source On Resistance of 60mR (max) and a 3.3A current rating. This single-element transistor boasts fast switching speeds with a 4ns Turn-On Delay Time and 9.5ns Fall Time, operating from -55°C to 150°C with 1.5W Power Dissipation. Surface mountable and compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SOT-23-3 |
| Current Rating | 3.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Input Capacitance | 544pF |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60mR |
| Drain to Source Breakdown Voltage | 20V |
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