ZXMN2B03E6TA

ZXMN2B03E6TA - Diodes
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Краткое описание: N-Channel MOSFET SOT-23-6, 20V, 5.4A, 40mR Rds On
Производитель Diodes
Категория Разнообразный

Дополнительная информация

N-channel MOSFET transistor in a SOT-23-6 package, designed for surface mounting. Features a maximum continuous drain current of 5.4A and a low drain-source on-resistance of 40mR at a gate-source voltage of 8V. Operates with a drain-source voltage up to 20V, offering fast switching speeds with turn-on delay of 4.2ns and fall time of 6.2ns. Maximum power dissipation is 1.7W, with an operating temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 1.8mm
Height 1.3mm
Length 3.1mm
Weight 0.000529oz
Polarity N-CHANNEL
Fall Time 6.2ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 40mR
Package/Case SOT-23-6
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.16nF
Number of Channels 1
Turn-On Delay Time 4.2ns
Radiation Hardening No
Turn-Off Delay Time 33.9ns
Reach SVHC Compliant Yes
Max Power Dissipation 1.7W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 40mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 5.4A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 40mR

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