ZXMN2B14FHTA
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Краткое описание:
N-Channel JFET, 20V, 4.3A ID, 55mR Rds(on), SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, SOT-23 package, featuring 20V Drain-Source Voltage (Vdss) and 4.3A Continuous Drain Current (ID). This single-element field-effect transistor offers a low Drain-Source On Resistance (Rds On) of 55mR. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. The device supports surface mounting and is supplied on tape and reel, meeting RoHS and REACH SVHC compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 872pF |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 3.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 55mR |
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