ZXMN2F30FHTA
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Краткое описание:
N-Channel JFET, 20V, 4.9A ID, 45mR Rds On, SOT-23
Дополнительная информация
N-Channel Silicon MOSFET, SOT-23 package, offering a continuous drain current of 4.9A and a drain-source voltage of 20V. Features low drain-source on-resistance of 45mR (max) and a gate-source voltage up to 12V. This surface-mount transistor operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.4W. Includes fast switching characteristics with turn-on delay time of 2.9ns and fall time of 5.6ns.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Nominal Vgs | 900mV |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| RoHS Compliant | No |
| Package Quantity | 3000 |
| Input Capacitance | 452pF |
| Power Dissipation | 1.4W |
| Threshold Voltage | 900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.9ns |
| Dual Supply Voltage | 20V |
| On-State Resistance | 65mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 960mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
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