ZXMN2F34FHTA
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Краткое описание:
N-Channel JFET, 20V, 4A ID, 60mR Rds On, SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (ID) of 4A. Offers a low Drain-Source On-Resistance (Rds On) of 60mR. Packaged in a SOT-23-3 surface-mount case, this component operates within a temperature range of -55°C to 150°C and boasts fast switching times with a Turn-On Delay Time of 2.65ns and a Fall Time of 4.2ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 277pF |
| Threshold Voltage | 800mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.65ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 950mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60mR |
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