ZXMN3A01E6TA
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Краткое описание:
N-Channel JFET, 30V, 3A, 120mR Rds(on), SOT-23-6
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23-6 package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 3A Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 120mR. Operates with a Gate to Source Voltage (Vgs) up to 20V. Includes fast switching characteristics with a Turn-On Delay Time of 1.7ns and Fall Time of 2.3ns. Surface mountable with a maximum power dissipation of 1.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOT-23-6 |
| Current Rating | 2.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 190pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 1.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6.6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 120mR |
| Drain to Source Breakdown Voltage | 30V |
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