ZXMN3A01FTA
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Краткое описание:
N-Channel JFET, 30V, 2A ID, 120mR Rds(on), SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 1-Element, 3-PIN, SOT-23 package. Features 30V Drain-Source Voltage (Vdss), 2A Continuous Drain Current (ID), and 120mR Max Drain-Source On Resistance (Rds On). Operates from -55°C to 150°C with 625mW Max Power Dissipation. Surface mount termination with tape and reel packaging. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 190pF |
| Power Dissipation | 806mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.7ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 120mR |
