ZXMN3A02X8TA
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Краткое описание:
N-Channel MOSFET, 30V, 6.7A, 25mR Rds(on), MSOP
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 6.7A. Offers a low drain-source on-resistance of 25mR (max) and a maximum power dissipation of 1.1W. Operates across a wide temperature range from -55°C to 150°C. Packaged in MSOP with tape and reel for efficient assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | MSOP |
| Current Rating | 6.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 1.4nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 30V |
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