ZXMN3A04DN8TA
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Краткое описание:
2 N-Ch JFET, 30V, 8.5A, 20mR RdsOn, SOIC
Дополнительная информация
Surface mount N-channel JFET with 30V drain-source voltage and 8.5A continuous drain current. Features low 20mR drain-source on-resistance, 1.89nF input capacitance, and fast switching times with 5.2ns turn-on and 38.1ns turn-off delay. Operates across a -55°C to 150°C temperature range, with 2.15W maximum power dissipation. Packaged in SOIC-8 for tape and reel distribution, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SOIC |
| Current Rating | 6.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 1.89nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 5.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20mR |
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