ZXMN3A04DN8TC

ZXMN3A04DN8TC - Diodes
Увеличить
Краткое описание: Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8

Дополнительная информация

Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8
RoHS Compliant
Mount Surface Mount
Weight 0.00261oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 6.1ns
Packaging Tape and Reel
Rds On Max 20mR
Package/Case SOP
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1.89nF
Number of Channels 2
Turn-On Delay Time 5.2ns
Turn-Off Delay Time 38.1ns
Max Power Dissipation 1.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 30mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.5A
Drain to Source Voltage (Vdss) 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.