ZXMN3A04KTC
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Краткое описание:
N-Channel MOSFET, 30V, 18.4A, 20mR Rds On, DPAK
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage (Vdss) and 18.4A continuous drain current (ID). Features low 20mΩ drain-source on-resistance (Rds On Max) and 2.15W power dissipation. This surface-mount device, packaged in DPAK-3 (TO-252-3), offers fast switching with turn-on delay of 5.2ns and fall time of 20.2ns. It operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | TO-252-3 |
| Current Rating | 18.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 1.89nF |
| Power Dissipation | 4.3W |
| Number of Channels | 1 |
| Turn-On Delay Time | 5.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20mR |
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