ZXMN3A06DN8TA
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N-Ch JFET, 30V, 6.2A ID, 35mR Rds On, SOIC-8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, SOIC-8 package, offering 30V Drain to Source Breakdown Voltage and 6.2A Continuous Drain Current. Features a low 35mR Drain-source On Resistance and 2.1W Max Power Dissipation. Operates across a wide temperature range from -55°C to 150°C. This surface mount device is RoHS compliant and designed for efficient switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 4.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 796pF |
| Power Dissipation | 2.1W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
| Drain to Source Breakdown Voltage | 30V |
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