ZXMN3A14FTA
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Краткое описание:
N-Channel JFET, 30V, 3.9A ID, 65mR Rds On, SOT-23
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a maximum continuous drain current of 3.9A. Offers a low Drain-source On Resistance (Rds On) of 65mR. Packaged in a SOT-23-3 surface mount case with a 1.02mm height, 3.04mm length, and 1.4mm width. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Package/Case | SOT-23-3 |
| Current Rating | 3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 448pF |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 95mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
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