ZXMN3B01FTA
Производится
Увеличить
Краткое описание:
N-Channel JFET, 30V, 2A, 150mR Rds On, SOT-23
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 30V drain-source voltage rating and a continuous drain current of 2A. Offers a low drain-source on-resistance of 150mR. Packaged in a SOT-23 surface-mount case with 3 pins. Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.98ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Nominal Vgs | 700mV |
| Package/Case | SOT-23 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 258pF |
| Power Dissipation | 806mW |
| Threshold Voltage | 700mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.69ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 150mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
