ZXMN3B14FTA
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Краткое описание:
N-Channel JFET, 30V, 3.5A ID, 80mR Rds(on), SOT-23
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23 package, offering 30V Drain-to-Source Breakdown Voltage and a maximum continuous drain current of 3.5A. Features a low Drain-source On-Resistance of 80mR. Operates with a Gate-to-Source Voltage up to 12V, exhibiting turn-on delay time of 3.6ns and fall time of 9.8ns. This surface mount component supports a maximum power dissipation of 1W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-23-3 |
| Current Rating | 3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 568pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | 30V |
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