ZXMN3G32DN8TA
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Краткое описание:
N-Ch JFET, 30V, 7.1A ID, 28mR RdsOn, SOP-8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOP-8 package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 30V Dual Supply Voltage. Offers a continuous drain current (ID) of 7.1A and a low Drain-source On Resistance-Max of 28mR. Operates within a temperature range of -55°C to 150°C. Includes 2.5ns Turn-On Delay Time and 9.7ns Fall Time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 472pF |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 2.5ns |
| Dual Supply Voltage | 30V |
| On-State Resistance | 45mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28mR |
| Drain to Source Breakdown Voltage | 30V |
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