ZXMN6A07FTA
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Краткое описание:
N-Channel JFET, 60V, 1.2A, SOT-23, SMD
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET for general-purpose switching and amplification. Features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 1.2A. Offers a low Drain-Source On-Resistance (Rds On) of 250mR at a nominal Gate-Source Voltage (Vgs) of 3V. This single-element transistor is housed in a compact SOT-23 surface-mount package, ideal for space-constrained applications. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 806mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 1.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 1.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 166pF |
| Power Dissipation | 806mW |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.8ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 250mR |
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