ZXMN6A07ZTA
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Краткое описание:
N-Channel JFET, 60V, 2.5A ID, 250mR RdsOn, SOT-89
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 1-Element, Surface Mount. Features 60V Drain to Source Voltage (Vdss), 2.5A Continuous Drain Current (ID), and 250mR maximum Drain-source On Resistance. Operates with a Gate to Source Voltage (Vgs) up to 20V. This device offers fast switching speeds with a 1.8ns Turn-On Delay Time and 2ns Fall Time. Packaged in a SOT-89-3 for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.004603oz |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Package/Case | SOT-89-3 |
| Current Rating | 1.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 166pF |
| Power Dissipation | 2.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.9ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.5W |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 250mR |
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