ZXMN6A08E6TA
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Краткое описание:
N-Channel JFET, 60V, 3.5A ID, 80mR Rds(on), SOT-23-6
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, SOT-23-6 package. Features 60V Drain to Source Breakdown Voltage (Vdss) and 3.5A Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 80mR. Operating temperature range from -55°C to 150°C. Surface mountable with a 1.1W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-23-6 |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 459pF |
| Power Dissipation | 1.7W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | 60V |
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