ZXMN6A08KTC

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ZXMN6A08KTC - Diodes
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Краткое описание: N-Channel MOSFET, 60V, 7.9A, 80mR, TO-252
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, TO-252-3 package, featuring 60V drain-source voltage and 7.9A continuous drain current. Offers low 80mΩ drain-source resistance and 2.12W power dissipation. Operates from -55°C to 150°C with fast switching times including 2.6ns turn-on delay and 4.6ns fall time. Surface mountable, RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
FET Type 1 N-Channel
Polarity N-CHANNEL
Fall Time 4.6ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 80mR
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 459pF
Number of Channels 1
Turn-On Delay Time 2.6ns
Radiation Hardening No
Turn-Off Delay Time 12.3ns
Reach SVHC Compliant Yes
Max Power Dissipation 2.12W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 80mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.9A
Drain to Source Voltage (Vdss) 60V

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