ZXMN6A09GTA
Увеличить
Краткое описание:
N-Channel JFET, 60V, 7.5A ID, 40mR Rds(on), SOT-223
Дополнительная информация
N-channel silicon MOSFET featuring 60V drain-source voltage and 7.5A continuous drain current. This surface-mount device offers a low 40mΩ drain-source on-resistance and a 1V threshold voltage. Designed for efficient switching, it exhibits a 4.9ns turn-on delay and 4.6ns fall time. Housed in a low-profile SOIC-4 (SOT-223) package, it operates from -55°C to 150°C with a maximum power dissipation of 3.9W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SOT-223 |
| Current Rating | 6.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.407nF |
| Power Dissipation | 3.9W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25.3ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 40mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
