ZXMN6A11DN8TA
Производится
Увеличить
Краткое описание:
N-Ch JFET, 60V, 3.2A ID, 120mR RdsOn, SOIC, 2-Ch
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount SOIC package. Features 60V Drain to Source Voltage (Vdss), 3.2A Continuous Drain Current (ID), and 120mR Max Drain-source On Resistance. Operates from -55°C to 150°C with 2.1W Power Dissipation. Includes 1.95ns Turn-On Delay Time and 4.6ns Fall Time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOIC |
| Current Rating | 2.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 330pF |
| Power Dissipation | 2.1W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 1.95ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.2ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 120mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
