ZXMN6A11DN8TC
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Краткое описание:
N-Channel JFET, 60V, 2.5A ID, 120mR Rds On, SO-8
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers a 60V drain-to-source voltage and 2.5A continuous drain current. Featuring a low 120mR Rds On Max, this surface mount device operates within a -55°C to 150°C temperature range. Its SO-8 package, measuring 5mm x 4mm x 1.5mm, includes a 330pF input capacitance and fast switching times with a 1.95ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 3.5ns |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 330pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 1.95ns |
| Turn-Off Delay Time | 8.2ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 60V |
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