ZXMN6A11GTA
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Краткое описание:
N-Channel JFET, 60V, 4.4A ID, 120mR Rds(on), SOT-223
Дополнительная информация
N-channel silicon MOSFET for surface mounting, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 4.4A. This single-element transistor offers a low drain-source on-resistance of 120mΩ, with fast switching speeds including a 1.95ns turn-on delay and 4.6ns fall time. Packaged in a SOT-223 case, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 3.9W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOT-223 |
| Current Rating | 2.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 330pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 1.95ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.2ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 120mR |
| Drain to Source Breakdown Voltage | 60V |
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