ZXMN6A11ZTA
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Краткое описание:
N-Channel JFET, 60V, 3.6A ID, 120mR Rds(on), SOT-89
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 60V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 3.6A. Offers a low drain-source on-resistance (Rds On) of 120mR. Packaged in a SOT-89-3 surface mount case, this component operates within a temperature range of -55°C to 150°C and boasts fast switching times with a turn-on delay of 1.95ns and fall time of 4.6ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.004603oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOT-89-3 |
| Current Rating | 2.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 330pF |
| Power Dissipation | 2.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.95ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.2ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 120mR |
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