ZXMN7A11GTA
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Краткое описание:
N-Channel MOSFET, 70V, 3.8A, 130mR, SOT-223
Дополнительная информация
N-Channel MOSFET, 70V Vdss, 3.8A continuous drain current, and 130mΩ maximum drain-source on-resistance. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-261AA (SOT-223) package for surface mounting. Key electrical characteristics include a 1.9ns turn-on delay, 5.8ns fall time, and 11.5ns turn-off delay. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 3.9W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 5.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 130mR |
| Package/Case | SOT-223 |
| Current Rating | 3.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 70V |
| Package Quantity | 1000 |
| Input Capacitance | 298pF |
| Power Dissipation | 3.9W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 70V |
| Drain-source On Resistance-Max | 130mR |
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