ZXMP10A17G
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Краткое описание:
P-CH MOSFET 100V 1.7A TO-261AA SMT
Дополнительная информация
P-channel enhancement mode power MOSFET in a TO-261AA surface mount package. Features a maximum drain-source voltage of 100V and a continuous drain current of 1.7A. Offers a low drain-source on-resistance of 350mOhm at 10V. The 4-pin configuration includes a tab for enhanced thermal performance, with typical gate charge values of 7.1nC at 6V and 10.7nC at 10V. Operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6M0U4 |
| Pin Count | 4 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-261AA |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Package Width (mm) | 3.7(Max) |
| Package Height (mm) | 1.65(Max) |
| Package Length (mm) | 6.7(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3900mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 10.7nC |
| Typical Gate Charge @ Vgs | 7.1@6V|10.7@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 350@10VmOhm |
| Typical Input Capacitance @ Vds | 424@50VpF |
| Maximum Continuous Drain Current | 1.7A |
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